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2SC1505 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 50mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in line-operated color TV chroma output Circuits and sound output circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 200 mA 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC1505 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1505 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA;

IB=5mA 2.0 V ICBO Collector Cutoff Current VCB= 200V ;

Overview

isc Silicon NPN Power Transistor.