Datasheet Details
| Part number | 2SC1569 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.65 KB |
| Description | NPN Transistor |
| Download | 2SC1569 Download (PDF) |
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| Part number | 2SC1569 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.65 KB |
| Description | NPN Transistor |
| Download | 2SC1569 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- :V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 40-170 @IC= 50mA, VCE= 10V ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV chroma output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 150 mA IE Emitter Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 150 mA 1.5 W 12.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC1569 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1569 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1569 | Silicon NPN Transistor | Toshiba |
 |
2SC1569 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC1567 | NPN Transistor |
| 2SC1568 | NPN Transistor |
| 2SC1504 | NPN Transistor |
| 2SC1505 | NPN Transistor |
| 2SC1507 | NPN Transistor |
| 2SC1516 | NPN Transistor |
| 2SC1576 | NPN Transistor |
| 2SC1577 | NPN Transistor |
| 2SC1579 | NPN Transistor |
| 2SC1580 | NPN Transistor |