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2SC1730 - Silicon NPN RF Transistor

General Description

Low Base Time Constant; rbb’

CC = 10 ps TYP.

fT= 1100 MHz TYP.

COB = 1.5 pF Max.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV VHF, UHF tuner osci

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC1730 DESCRIPTION ·Low Base Time Constant; rbb’ • CC = 10 ps TYP. ·High Gain Bandwidth Product fT= 1100 MHz TYP. ·Low Output Capacitance; COB = 1.5 pF Max. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV VHF, UHF tuner oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.25 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website:www.iscsemi.