Datasheet Details
| Part number | 2SC1755 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.05 KB |
| Description | NPN Transistor |
| Download | 2SC1755 Download (PDF) |
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| Part number | 2SC1755 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.05 KB |
| Description | NPN Transistor |
| Download | 2SC1755 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- :V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 40-200 @IC= 10mA, VCE= 10V ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV chroma, video , audio output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 200 mA ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 700 mA 1.2 W 15 150 ℃ Tstg Storage Temperature Range -40~150 ℃ 2SC1755 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1755 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA;
IB= 5mA ICBO Collector Cutoff Current VCB= 200V ;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1755 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
 |
2SC1755 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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