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2SC1847 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·High Collector Current-IC= 1.5A ·Low Saturation Voltage : VCE(sat)= 1V(Max)@ IC= 2.0A, IB= 0.2A ·Good Linearity of hFE ·Complement to Type 2SA0886 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 1.2*1 W 5*2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC1847 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1847 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2.0A;

IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 2.0A;

Overview

isc Silicon NPN Power Transistor.