Datasheet Details
| Part number | 2SC1942 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.87 KB |
| Description | NPN Transistor |
| Download | 2SC1942 Download (PDF) |
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| Part number | 2SC1942 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.87 KB |
| Description | NPN Transistor |
| Download | 2SC1942 Download (PDF) |
|
|
|
·High Voltage-VCEX= 1500V(Min.) ·Collector Current- IC = 3.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 6 A 50 W 150 ℃ Tstg Storage Temperature -45~150 ℃ 2SC1942 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1942 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA;RBE=∞ V(BR)EBO Emitter -Base Breakdown Voltage IE=10mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=2.5A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1942 | Silicon NPN Transistor | Hitachi Semiconductor |
 |
2SC1942 | SILICON POWER TRANSISTOR | SavantIC |
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