Datasheet Details
| Part number | 2SC1953 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.52 KB |
| Description | NPN Transistor |
| Download | 2SC1953 Download (PDF) |
|
|
| Part number | 2SC1953 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.52 KB |
| Description | NPN Transistor |
| Download | 2SC1953 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Complement to Type 2SA914 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power pre-amplification,which is optimum for the pre-driver stage of a 60 W to 100 W output amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 mA ICP Collector Current-Peak PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 100 mA 1.2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC1953 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1953 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1953 | Power Transistors | Panasonic Semiconductor |
 |
2SC1953 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC1904 | NPN Transistor |
| 2SC1905 | NPN Transistor |
| 2SC1906 | NPN Transistor |
| 2SC1907 | NPN Transistor |
| 2SC1913 | NPN Transistor |
| 2SC1922 | NPN Transistor |
| 2SC1929 | NPN Transistor |
| 2SC1942 | NPN Transistor |
| 2SC1969 | Silicon NPN Power Transistor |
| 2SC1975 | NPN Transistor |