Datasheet Details
| Part number | 2SC2073 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.25 KB |
| Description | NPN Transistor |
| Download | 2SC2073 Download (PDF) |
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| Part number | 2SC2073 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.25 KB |
| Description | NPN Transistor |
| Download | 2SC2073 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA940 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2073 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2073 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC2073 | Silicon NPN Transistor | Toshiba |
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