Datasheet Details
| Part number | 2SC2075 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.40 KB |
| Description | NPN Transistor |
| Download | 2SC2075 Download (PDF) |
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| Part number | 2SC2075 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.40 KB |
| Description | NPN Transistor |
| Download | 2SC2075 Download (PDF) |
|
|
|
·High transition frequency ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·27MHz Power Amplifier Applications ·Recommended for output stage application of AM 4W transmitter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCER Collector-Emitter Voltage RBE=150Ω 80 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 4 A IE Emitter current Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2075 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2075 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CER Collector-Emitter Breakdown Voltage IC=10mA;
RBE=500Ω V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=3A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2075 | Silicon NPN Transistor | Toshiba |
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2SC2075 | SILICON POWER TRANSISTOR | SavantIC |
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