Datasheet Details
| Part number | 2SC2085 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.50 KB |
| Description | NPN Transistor |
| Download | 2SC2085 Download (PDF) |
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| Part number | 2SC2085 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.50 KB |
| Description | NPN Transistor |
| Download | 2SC2085 Download (PDF) |
|
|
|
·Collector-Base Breakdown Voltage- : V(BR)CBO= 300V(Min.) ·Large collector power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·1W output in class-A operation ·Line-operated AF amplifier chrominance output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCER Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 100 mA ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 150 mA 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2085 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors 2SC2085 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCER Collector-Emitter Voltage IC= 5mA;
RBE= 3kΩ 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA;
isc Silicon NPN Power Transistors.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2085 | SILICON POWER TRANSISTOR | SavantIC |
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