Datasheet Details
| Part number | 2SC2123 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.53 KB |
| Description | NPN Transistor |
| Download | 2SC2123 Download (PDF) |
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| Part number | 2SC2123 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.53 KB |
| Description | NPN Transistor |
| Download | 2SC2123 Download (PDF) |
|
|
|
·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V (Min) ·High Current Capability ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal output and high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 15 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC2123 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2123 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2123 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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