Datasheet Details
| Part number | 2SC2168 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 226.72 KB |
| Description | NPN Transistor |
| Download | 2SC2168 Download (PDF) |
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| Part number | 2SC2168 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 226.72 KB |
| Description | NPN Transistor |
| Download | 2SC2168 Download (PDF) |
|
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|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical output ,audio output driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2168 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
isc Silicon NPN Power Transistor 2SC2168.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2168 | Silicon NPN Power Transistor | SavantIC |
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