Datasheet Details
| Part number | 2SC2189 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.81 KB |
| Description | NPN Transistor |
| Download | 2SC2189 Download (PDF) |
|
|
| Part number | 2SC2189 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.81 KB |
| Description | NPN Transistor |
| Download | 2SC2189 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2189 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2189 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2120 | Silicon NPN Transistor |
| 2SC2122 | NPN Transistor |
| 2SC2123 | NPN Transistor |
| 2SC2137 | NPN Transistor |
| 2SC2139 | NPN Transistor |
| 2SC2140 | NPN Transistor |
| 2SC2151 | NPN Transistor |
| 2SC2166 | NPN Transistor |
| 2SC2167 | NPN Transistor |
| 2SC2168 | NPN Transistor |