npn transistor.
*Designed for high speed switching and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARA.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V (Min)
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for high speed switching and power a.
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