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2SC2209 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) High Collector Power Dissipation Complement to Type 2SA963 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for low frequency power amplification.

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Datasheet Details

Part number 2SC2209
Manufacturer INCHANGE
File Size 194.23 KB
Description NPN Transistor
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·High Collector Power Dissipation ·Complement to Type 2SA963 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2209 isc website：www.iscsemi.
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