2SC2238B
2SC2238B is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage
: V(BR)CEO=200V
- Good Linearity of h FE
- plement to Type 2SA968B
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
INCHANGE Semiconductor
APPLICATIONS
- Power amplifier applications
- Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Total Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC=10m A ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE=1m A ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50m A
VBE(on) Base-Emitter On Voltage
IC=0.5A ; VCE= 5V
ICBO
Collector Cutoff...
