Datasheet Details
| Part number | 2SC2258 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.55 KB |
| Description | NPN Transistor |
| Download | 2SC2258 Download (PDF) |
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| Part number | 2SC2258 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.55 KB |
| Description | NPN Transistor |
| Download | 2SC2258 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high breakdown voltage general amplification ·For video output amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.15 A 4 W 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2258 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2258 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Vltage IE= 0.1mA ;
IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2258 | Silicon NPN Transistor | Panasonic Semiconductor |
 |
2SC2258 | SILICON POWER TRANSISTOR | SavantIC |
|
2SC2258A | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2209 | NPN Transistor |
| 2SC2229 | NPN Transistor |
| 2SC2238 | NPN Transistor |
| 2SC2238A | NPN Transistor |
| 2SC2238B | NPN Transistor |
| 2SC2238B | NPN Transistor |
| 2SC2239 | NPN Transistor |
| 2SC2243 | NPN Transistor |
| 2SC2244 | NPN Transistor |
| 2SC2245 | NPN Transistor |