Datasheet Details
| Part number | 2SC2262 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.04 KB |
| Description | NPN Transistor |
| Download | 2SC2262 Download (PDF) |
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| Part number | 2SC2262 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.04 KB |
| Description | NPN Transistor |
| Download | 2SC2262 Download (PDF) |
|
|
|
·High Power Dissipation- : PC= 80W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Complement to Type 2SA982 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SC2262 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2262 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2260 | NPN Transistor |
| 2SC2261 | NPN Transistor |
| 2SC2266 | NPN Transistor |
| 2SC2209 | NPN Transistor |
| 2SC2229 | NPN Transistor |
| 2SC2238 | NPN Transistor |
| 2SC2238A | NPN Transistor |
| 2SC2238B | NPN Transistor |
| 2SC2238B | NPN Transistor |
| 2SC2239 | NPN Transistor |