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2SC2270 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·High Collector Power Dissipation PC=10W(Tc=25℃), PC=1.0W(Ta=25℃) ·High DC Current Gain : hFE=140~450@VCE=2V,IC=0.5A hFE=70(Min)@VCE=2V,IC=4A ·Low Collector Saturation Voltage VCE(sat)=1.0V(Max)@IC=4A,IB=0.1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for strobo flash and medimum power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 20 VCES Collector-Emitter Voltage 40 VEBO Emitter-Base Voltage 8 IC Collector Current-Continuous 5 ICM Collector Current-Peak 8 IE Emitter Current-Continuous -5 IEM Emitter Current-Peak -8 Collector Power Dissipation @ TC=25℃ 10 PC Collector Power Dissipation @ Ta=25℃ 1.0 UNIT V V V V A A A A W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2270 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2270 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;

IE= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= 1mA ;

Overview

isc Silicon NPN Power Transistor.