Datasheet Details
| Part number | 2SC2275 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.31 KB |
| Description | NPN Transistor |
| Download | 2SC2275 Download (PDF) |
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| Part number | 2SC2275 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.31 KB |
| Description | NPN Transistor |
| Download | 2SC2275 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SA985 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·High frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3.0 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 0.3 A 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2275 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 1A;
IB= 0.1A ICBO Collector Cutoff Current VCB= 120V ;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2275 | SILICON POWER TRANSISTOR | SavantIC |
|
2SC2275A | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2270 | NPN Transistor |
| 2SC2209 | NPN Transistor |
| 2SC2229 | NPN Transistor |
| 2SC2238 | NPN Transistor |
| 2SC2238A | NPN Transistor |
| 2SC2238B | NPN Transistor |
| 2SC2238B | NPN Transistor |
| 2SC2239 | NPN Transistor |
| 2SC2243 | NPN Transistor |
| 2SC2244 | NPN Transistor |