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2SC2292 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 8 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 50mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;

IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A;

Overview

isc Silicon NPN Power Transistor 2SC2292.