Datasheet Details
| Part number | 2SC2331 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.51 KB |
| Description | NPN Transistor |
| Download | 2SC2331 Download (PDF) |
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| Part number | 2SC2331 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.51 KB |
| Description | NPN Transistor |
| Download | 2SC2331 Download (PDF) |
|
|
|
·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A ·Fast Switching Speed ·Complement to Type 2SA1008 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 2.0 A ICM Collector Current-Peak 4.0 A IB Base Current-Continuous 1.0 A Collector Power Dissipation@ Ta=25℃ 1.5 PC W Collector Power Dissipation@ TC=25℃ 15 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2331 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
isc Silicon NPN Power Transistor 2SC2331.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2331 | Silicon Power Transistor | NEC |
 |
2SC2331 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2333 | NPN Transistor |
| 2SC2334 | NPN Transistor |
| 2SC2335 | NPN Transistor |
| 2SC2336 | NPN Transistor |
| 2SC2337 | NPN Transistor |
| 2SC2304 | NPN Transistor |
| 2SC2305 | NPN Transistor |
| 2SC2307 | NPN Transistor |
| 2SC2316 | NPN Transistor |
| 2SC2344 | NPN Transistor |