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2SC2335 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 3A, IB= 0.6A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed switching in Inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters,DC-DC and converter.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 7.0 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.125 ℃/W 2SC2335 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) VCE(sat) VBE(sat) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC= 50mA, IB=0 IC= 3A;

IB= 0.6A IC= 3A;

Overview

isc Silicon NPN Power Transistor.