Datasheet Details
| Part number | 2SC2344 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.72 KB |
| Description | NPN Transistor |
| Download | 2SC2344 Download (PDF) |
|
|
| Part number | 2SC2344 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.72 KB |
| Description | NPN Transistor |
| Download | 2SC2344 Download (PDF) |
|
|
|
·Low Collector Saturation Voltage- : VCE(sat)= 0.3V(Typ.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Complement to Type 2SA1011 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, audio frequency power amplifiers, 100W output predriver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3.0 A PC Total Power Dissipation@ TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2344 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2344 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2344 | PNP/NPN Transistors | Sanyo Semicon Device |
 |
2SC2344 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2304 | NPN Transistor |
| 2SC2305 | NPN Transistor |
| 2SC2307 | NPN Transistor |
| 2SC2316 | NPN Transistor |
| 2SC2331 | NPN Transistor |
| 2SC2333 | NPN Transistor |
| 2SC2334 | NPN Transistor |
| 2SC2335 | NPN Transistor |
| 2SC2336 | NPN Transistor |
| 2SC2337 | NPN Transistor |