Datasheet Details
| Part number | 2SC2365 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.17 KB |
| Description | NPN Transistor |
| Download | 2SC2365 Download (PDF) |
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| Part number | 2SC2365 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.17 KB |
| Description | NPN Transistor |
| Download | 2SC2365 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 8 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2365 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2365 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2361 | NPN Transistor |
| 2SC2304 | NPN Transistor |
| 2SC2305 | NPN Transistor |
| 2SC2307 | NPN Transistor |
| 2SC2316 | NPN Transistor |
| 2SC2331 | NPN Transistor |
| 2SC2333 | NPN Transistor |
| 2SC2334 | NPN Transistor |
| 2SC2335 | NPN Transistor |
| 2SC2336 | NPN Transistor |