Datasheet Details
| Part number | 2SC2371 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.08 KB |
| Description | NPN Transistor |
| Download | 2SC2371 Download (PDF) |
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| Part number | 2SC2371 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.08 KB |
| Description | NPN Transistor |
| Download | 2SC2371 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for video applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.1 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2371 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2371 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2371 | TRANSISTOR | CDIL |
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2SC2371 | NPN Silicon Power Transistors | MCC |
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