Datasheet Details
| Part number | 2SC2373 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.79 KB |
| Description | NPN Transistor |
| Download | 2SC2373 Download (PDF) |
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| Part number | 2SC2373 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.79 KB |
| Description | NPN Transistor |
| Download | 2SC2373 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A, IB= 0.5A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output for B/W TV applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.125 ℃/W 2SC2373 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2373 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SC2331 | NPN Transistor |
| 2SC2333 | NPN Transistor |
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| 2SC2336 | NPN Transistor |