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2SC2440 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·High Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 400(V)(Min.) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A IB Base Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 40 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 3.0 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2440 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;

IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;

Overview

isc Silicon NPN Power Transistor 2SC2440.