Datasheet Details
| Part number | 2SC2485 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.62 KB |
| Description | NPN Transistor |
| Download | 2SC2485 Download (PDF) |
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| Part number | 2SC2485 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.62 KB |
| Description | NPN Transistor |
| Download | 2SC2485 Download (PDF) |
|
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|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power Dissipation ·Complement to Type 2SA1061 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2485 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2485 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 4A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2485 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2482 | NPN Transistor |
| 2SC2484 | Silicon NPN Power Transistor |
| 2SC2486 | NPN Transistor |
| 2SC2488 | NPN Transistor |
| 2SC2489 | Silicon NPN Power Transistor |
| 2SC2429 | NPN Transistor |
| 2SC2440 | NPN Transistor |
| 2SC245 | NPN Transistor |
| 2SC2460 | NPN Transistor |
| 2SC2461 | NPN Transistor |