Datasheet Details
| Part number | 2SC2488 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.03 KB |
| Description | NPN Transistor |
| Download | 2SC2488 Download (PDF) |
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| Part number | 2SC2488 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.03 KB |
| Description | NPN Transistor |
| Download | 2SC2488 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1064 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF amplifier, high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 100 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SC2488 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
isc Silicon NPN Power Transistor.
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| 2SC2482 | NPN Transistor |
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| 2SC2429 | NPN Transistor |
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| 2SC2461 | NPN Transistor |