Datasheet Details
| Part number | 2SC2502 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.74 KB |
| Description | NPN Transistor |
| Download | 2SC2502 Download (PDF) |
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| Part number | 2SC2502 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.74 KB |
| Description | NPN Transistor |
| Download | 2SC2502 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 6 ICM Collector Current-Peak 12 IB Base Current-Continuous 2 PC Collector Power Dissipation @ TC=25℃ 50 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
isc Silicon NPN Power Transistor 2SC2502.
| Part Number | Description |
|---|---|
| 2SC2501 | NPN Transistor |
| 2SC2516 | NPN Transistor |
| 2SC2517 | NPN Transistor |
| 2SC2523 | NPN Transistor |
| 2SC2525 | NPN Transistor |
| 2SC2527 | NPN Transistor |
| 2SC2534 | NPN Transistor |
| 2SC2535 | NPN Transistor |
| 2SC2541 | NPN Power Transistor |
| 2SC2542 | NPN Transistor |