Datasheet Details
| Part number | 2SC2527 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.64 KB |
| Description | NPN Transistor |
| Download | 2SC2527 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2527 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.64 KB |
| Description | NPN Transistor |
| Download | 2SC2527 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous Pc Total Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2527 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2527 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC2527 | SILICON HIGH SPEED POWER TRANSISTOR | Fujitsu Media Devices |
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2SC2527 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2523 | NPN Transistor |
| 2SC2525 | NPN Transistor |
| 2SC2501 | NPN Transistor |
| 2SC2502 | NPN Transistor |
| 2SC2516 | NPN Transistor |
| 2SC2517 | NPN Transistor |
| 2SC2534 | NPN Transistor |
| 2SC2535 | NPN Transistor |
| 2SC2541 | NPN Power Transistor |
| 2SC2542 | NPN Transistor |