Datasheet Details
| Part number | 2SC2552 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.73 KB |
| Description | NPN Transistor |
| Download | 2SC2552 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2552 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.73 KB |
| Description | NPN Transistor |
| Download | 2SC2552 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A IB Base Current-Continuous Pc Total Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2552 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC2552 | Silicon NPN Transistor | Toshiba Semiconductor |
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2SC2552 | SILICON POWER TRANSISTOR | SavantIC |
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| 2SC2523 | NPN Transistor |
| 2SC2525 | NPN Transistor |
| 2SC2527 | NPN Transistor |
| 2SC2534 | NPN Transistor |
| 2SC2535 | NPN Transistor |