Datasheet Details
| Part number | 2SC2580 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.07 KB |
| Description | NPN Transistor |
| Download | 2SC2580 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2580 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.07 KB |
| Description | NPN Transistor |
| Download | 2SC2580 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 9 A 90 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2580 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 0.5A ICBO Collector Cutoff Current VCB= 120V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC2580 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2581 | NPN Transistor |
| 2SC2582 | NPN Transistor |
| 2SC2501 | NPN Transistor |
| 2SC2502 | NPN Transistor |
| 2SC2516 | NPN Transistor |
| 2SC2517 | NPN Transistor |
| 2SC2523 | NPN Transistor |
| 2SC2525 | NPN Transistor |
| 2SC2527 | NPN Transistor |
| 2SC2534 | NPN Transistor |