Datasheet Details
| Part number | 2SC2616 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.99 KB |
| Description | NPN Transistor |
| Download | 2SC2616 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2616 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.99 KB |
| Description | NPN Transistor |
| Download | 2SC2616 Download (PDF) |
|
|
|
·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed and high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2616 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 50mA;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
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|---|---|
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| 2SC2656 | NPN Transistor |