Datasheet Details
| Part number | 2SC2626 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.67 KB |
| Description | NPN Transistor |
| Download | 2SC2626 Download (PDF) |
|
|
Overview: isc Silicon NPN Power Transistor 2SC2626.
| Part number | 2SC2626 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.67 KB |
| Description | NPN Transistor |
| Download | 2SC2626 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VCEO(SUS) Collector-Emitter Voltage 300 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.55 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2626 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 300 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2626 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2608 | NPN Transistor |
| 2SC2611 | NPN Transistor |
| 2SC2612 | NPN Transistor |
| 2SC2613 | NPN Transistor |
| 2SC2615 | NPN Transistor |
| 2SC2616 | NPN Transistor |
| 2SC2650 | Silicon NPN Power Transistor |
| 2SC2654 | NPN Transistor |
| 2SC2655 | NPN Transistor |
| 2SC2656 | NPN Transistor |