Datasheet4U Logo Datasheet4U.com

2SC2654 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage :VCE(sat)= 0.3(V)(Max)@IC= 3A ·Complement to Type 2SA1129 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifiers and mid-speed switching applications.

·Ideal for use in a lamp driver.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current- Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2654 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2654 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

2SC2654 Distributor & Price

Compare 2SC2654 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.