Datasheet Details
| Part number | 2SC2660 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.73 KB |
| Description | NPN Transistor |
| Download | 2SC2660 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2660 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.73 KB |
| Description | NPN Transistor |
| Download | 2SC2660 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- V(BR)CEO= 150V (Min) ·Large Collector Power Dissipation ·Complement to Type 2SA1133 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 3 A PC Collector Power Dissipation 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2660 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 500μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC2660 | SILICON POWER TRANSISTOR | SavantIC |
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2SC2660A | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2608 | NPN Transistor |
| 2SC2611 | NPN Transistor |
| 2SC2612 | NPN Transistor |
| 2SC2613 | NPN Transistor |
| 2SC2615 | NPN Transistor |
| 2SC2616 | NPN Transistor |
| 2SC2626 | NPN Transistor |
| 2SC2650 | Silicon NPN Power Transistor |
| 2SC2654 | NPN Transistor |
| 2SC2655 | NPN Transistor |