Datasheet Details
| Part number | 2SC2681 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.49 KB |
| Description | NPN Transistor |
| Download | 2SC2681 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2681 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.49 KB |
| Description | NPN Transistor |
| Download | 2SC2681 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- V(BR)CEO= 115V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1141 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 115 V VCEO Collector-Emitter Voltage 115 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 2.0 W 100 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2681 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A;
IB= 0.45A VBE(on) Base-Emitter On Voltage IC= 4.5A;
VCE= 2V ICBO Collector Cutoff Current VCB= 80V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2681 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2682 | NPN Transistor |
| 2SC2688 | NPN Transistor |
| 2SC2608 | NPN Transistor |
| 2SC2611 | NPN Transistor |
| 2SC2612 | NPN Transistor |
| 2SC2613 | NPN Transistor |
| 2SC2615 | NPN Transistor |
| 2SC2616 | NPN Transistor |
| 2SC2626 | NPN Transistor |
| 2SC2650 | Silicon NPN Power Transistor |