Datasheet Details
| Part number | 2SC2706 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.89 KB |
| Description | NPN Transistor |
| Download | 2SC2706 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2706 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.89 KB |
| Description | NPN Transistor |
| Download | 2SC2706 Download (PDF) |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Complement to Type 2SA1146 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency low power amplifier applications ·Recommend for 70W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2706 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2706 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 140 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC2706 | SILICON POWER TRANSISTOR | SavantIC |
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2SC2706 | Silicon NPN Transistor | Toshiba |
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