Datasheet Details
| Part number | 2SC2751 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.49 KB |
| Description | NPN Transistor |
| Download | 2SC2751 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2751 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.49 KB |
| Description | NPN Transistor |
| Download | 2SC2751 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Current Capability ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current switching industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7.5 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2751 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2751 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) VCBO Collector-Emitter Sustaining Voltage IC= 30mA;
IB=0 Collector-Emitter Sustaining Voltage IB= 1mA, Ic=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC2751 | Silicon NPN Power Transistors | Savant |
| Part Number | Description |
|---|---|
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| 2SC2749 | NPN Transistor |