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2SC2752 - NPN Transistor

Description

High breakdown voltage Complementary to 2SA1156 PNP transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC2752 is suitable for low power switching regulator, DC-DC converter and high voltage s

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·Complementary to 2SA1156 PNP transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SC2752 is suitable for low power switching regulator, DC-DC converter and high voltage switch. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCER Collector-Emitter Voltage RBE=150Ω 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 0.5 A 10 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2752 isc website：www.iscsemi.
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