Datasheet Details
| Part number | 2SC2914 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.92 KB |
| Description | NPN Transistor |
| Download | 2SC2914 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor 2SC2914.
| Part number | 2SC2914 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.92 KB |
| Description | NPN Transistor |
| Download | 2SC2914 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 120 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC2914 | Silicon NPN Transistor | Toshiba |
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2SC2914 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SC2920 | NPN Transistor |
| 2SC2921 | NPN Transistor |
| 2SC2922 | NPN Transistor |
| 2SC2928 | NPN Transistor |
| 2SC2929 | Silicon NPN Power Transistor |
| 2SC2934 | NPN Transistor |
| 2SC2943 | NPN Transistor |
| 2SC2944 | NPN Transistor |