Datasheet4U Logo Datasheet4U.com

2SC2922 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1216 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 17 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor 2SC2922 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2922 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;

Overview

isc Silicon NPN Power Transistor.