Datasheet Details
| Part number | 2SC2981 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.17 KB |
| Description | NPN Transistor |
| Download | 2SC2981 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2981 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.17 KB |
| Description | NPN Transistor |
| Download | 2SC2981 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 2A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage, high-speed and high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2981 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2981 | Silicon power Transistor | SavantIC |
| Part Number | Description |
|---|---|
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