Datasheet Details
| Part number | 2SC3012 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.95 KB |
| Description | NPN Transistor |
| Download | 2SC3012 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3012 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.95 KB |
| Description | NPN Transistor |
| Download | 2SC3012 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 130V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1232 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 130 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3012 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A;
IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5.0A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3012 | Silicon power Transistor | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3025 | NPN Transistor |
| 2SC3026 | NPN Transistor |
| 2SC3032 | NPN Transistor |
| 2SC3038 | NPN Transistor |
| 2SC3039 | NPN Transistor |
| 2SC3040 | NPN Transistor |
| 2SC3041 | NPN Transistor |
| 2SC3042 | NPN Transistor |
| 2SC3043 | NPN Transistor |
| 2SC3047 | NPN Transistor |