Datasheet Details
| Part number | 2SC3038 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.54 KB |
| Description | NPN Transistor |
| Download | 2SC3038 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3038 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.54 KB |
| Description | NPN Transistor |
| Download | 2SC3038 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3038 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
RBE= ∞ VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2SC3038 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device | |
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2SC3038 | Silicon power Transistor | SavantIC |
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