Datasheet Details
| Part number | 2SC3047 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.47 KB |
| Description | NPN Transistor |
| Download | 2SC3047 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor 2SC3047.
| Part number | 2SC3047 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.47 KB |
| Description | NPN Transistor |
| Download | 2SC3047 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3047 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3047 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3040 | NPN Transistor |
| 2SC3041 | NPN Transistor |
| 2SC3042 | NPN Transistor |
| 2SC3043 | NPN Transistor |
| 2SC3012 | NPN Transistor |
| 2SC3025 | NPN Transistor |
| 2SC3026 | NPN Transistor |
| 2SC3032 | NPN Transistor |
| 2SC3038 | NPN Transistor |
| 2SC3039 | NPN Transistor |