Datasheet Details
| Part number | 2SC3060 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.67 KB |
| Description | NPN Transistor |
| Download | 2SC3060 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor 2SC3060.
| Part number | 2SC3060 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.67 KB |
| Description | NPN Transistor |
| Download | 2SC3060 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 850V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic generators ·Class C and D amplifiers ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 850 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 150 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3060 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
RBE= ∞ 850 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1 mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3060 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3061 | NPN Transistor |
| 2SC3063 | NPN Transistor |
| 2SC3012 | NPN Transistor |
| 2SC3025 | NPN Transistor |
| 2SC3026 | NPN Transistor |
| 2SC3032 | NPN Transistor |
| 2SC3038 | NPN Transistor |
| 2SC3039 | NPN Transistor |
| 2SC3040 | NPN Transistor |
| 2SC3041 | NPN Transistor |