Datasheet Details
| Part number | 2SC3063 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.64 KB |
| Description | NPN Transistor |
| Download | 2SC3063 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor 2SC3063.
| Part number | 2SC3063 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.64 KB |
| Description | NPN Transistor |
| Download | 2SC3063 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV video output amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.2 A 1.2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3063 | Silicon NPN Transistor | Panasonic Semiconductor |
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2SC3063 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3060 | NPN Transistor |
| 2SC3061 | NPN Transistor |
| 2SC3012 | NPN Transistor |
| 2SC3025 | NPN Transistor |
| 2SC3026 | NPN Transistor |
| 2SC3032 | NPN Transistor |
| 2SC3038 | NPN Transistor |
| 2SC3039 | NPN Transistor |
| 2SC3040 | NPN Transistor |
| 2SC3041 | NPN Transistor |