Datasheet Details
| Part number | 2SC3087 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.09 KB |
| Description | NPN Transistor |
| Download | 2SC3087 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3087 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.09 KB |
| Description | NPN Transistor |
| Download | 2SC3087 Download (PDF) |
|
|
|
·High Breakdown Voltage- : V(BR)CBO= 800V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3087 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC3087 MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 4mA;
RBE= ∞ 500 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3087 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
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2SC3087 | SILICON POWER TRANSISTOR | SavantIC |
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